Magic islands and barriers to attachment: A Si/Si(111)7x7 growth model

Citation
J. Myslivecek et al., Magic islands and barriers to attachment: A Si/Si(111)7x7 growth model, PHYS REV B, 60(19), 1999, pp. 13869-13873
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
19
Year of publication
1999
Pages
13869 - 13873
Database
ISI
SICI code
0163-1829(19991115)60:19<13869:MIABTA>2.0.ZU;2-L
Abstract
Surface reconstructions can drastically modify growth kinetics during initi al stages of epitaxial growth as well as during the process of surface equi libration after termination of growth. We investigate the effect of activat ion barriers hindering attachment of material to existing islands on the de nsity and size distribution of islands in a model of homoepitaxial growth o n a Si(111)7 x 7 reconstructed surface. An unusual distribution of island s izes peaked around "magic" sizes and a steep dependence of the island densi ty on the growth rate are observed. "Magic" islands (of a different shape a s compared to those obtained during growth) are observed also during surfac e equilibration. [S0163-1829(99)08343-5].