Shot noise in ferromagnetic single-electron tunneling devices

Citation
Br. Bulka et al., Shot noise in ferromagnetic single-electron tunneling devices, PHYS REV B, 60(17), 1999, pp. 12246-12255
Citations number
47
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
17
Year of publication
1999
Pages
12246 - 12255
Database
ISI
SICI code
0163-1829(19991101)60:17<12246:SNIFST>2.0.ZU;2-P
Abstract
Frequency-dependent current noise in ferromagnetic double junctions with a Coulomb blockade is studied theoretically in the limit of sequential tunnel ing. Two different relaxation processes are found in the correlations betwe en spin-polarized tunneling currents: low-frequency spin fluctuations and h igh-frequency charge fluctuations. Spin accumulation in strongly asymmetric junctions is shown to lend to a negative differential resistance. We also show that large spin noise activated in the range of negative differential resistance gives rise to a significant enhancement of the current noise. [S 0163-1829(99)09841-0].