Mv. Malyshev et Vm. Donnelly, Trace rare gases optical emission spectroscopy: Nonintrusive method for measuring electron temperatures in low-pressure, low-temperature plasmas, PHYS REV E, 60(5), 1999, pp. 6016-6029
Trace rare gases optical emission spectroscopy (TRG-OES) is a new, nonintru
sive method for determining electron temperatures (T-e) and, under some con
ditions, estimating electron densities (n(e)) in low-temperature, low-press
ure plasmas. The method is based on a comparison of atomic emission intensi
ties from trace amounts of rare gases (an equimixture of He, Ne, Ar, Kr, an
d Xe) added to the plasma, with intensities calculated from a model. For Ma
xwellian electron energy distribution functions (EEDFs), T-e is determined
from the best fit of theory to the experimental measurements. For non-Maxwe
llian EEDFs, T-e derived from the best fit describes the high-energy tail o
f the EEDF. This method was reported previously, and was further developed
and successfully applied to several laboratory and commercial plasma reacto
rs. It has also been used in investigations of correlations between high-T-
e and plasma-induced damage to thin gate oxide layers. In this paper, we pr
ovide a refined mechanism for the method and include a detailed description
of the generation of emission from the Paschen 2p manifold of rare gases b
oth from the ground state and through metastable states, a theoretical mode
l to calculate the number density of metastables (n(m)) of the rare gases,
a practical procedure to compute T-e from the ratios of experimental-to-the
oretical intensity ratios, a way to determine the electron density (pr,), a
discussion of the range of sensitivity of TRG-OES to the EEDF, and an esti
mate of the accuracy of T-e. The values of T-e obtained by TRG-OES in a tra
nsformer-coupled plasma reactor are compared with those obtained with a Lan
gmuir probe for a wide range of pressures and powers. The differences in T-
e from the two methods are explained in terms of the EEDF dependence on pre
ssure. [S1063-651X(99)14111-4].