Carrier mobility contribution to the piezoresistive effect in SmS

Authors
Vasil'ev, LN Kaminskii, VV
Citation
Ln. Vasil'Ev et Vv. Kaminskii, Carrier mobility contribution to the piezoresistive effect in SmS, PHYS SOL ST, 41(11), 1999, pp. 1799-1800
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF THE SOLID STATE
ISSN journal
10637834 → ACNP
Volume
41
Issue
11
Year of publication
1999
Pages
1799 - 1800
Database
ISI
SICI code
1063-7834(199911)41:11<1799:CMCTTP>2.0.ZU;2-0
Abstract
A study is reported of the contribution to the piezoresistive effect in sam arium-monosulfide-based materials by pressure-induced variation of carrier mobility. As follows from calculations and experimental data, the piezoresi stance coefficient for hydrostatic pressure cannot exceed 7x10(-3) MPa-1 at T=300 K. (C) 1999 American Institute of Physics. [S1063-7834(99)01011-4].