Electron density redistribution in sn-doped Bi2Te3

Citation
Iv. Gasenkova et al., Electron density redistribution in sn-doped Bi2Te3, PHYS SOL ST, 41(11), 1999, pp. 1805-1808
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF THE SOLID STATE
ISSN journal
10637834 → ACNP
Volume
41
Issue
11
Year of publication
1999
Pages
1805 - 1808
Database
ISI
SICI code
1063-7834(199911)41:11<1805:EDRISB>2.0.ZU;2-5
Abstract
X-ray photoelectron spectroscopy is used to investigate the redistribution of the density of electronic states in the valence band, and of the binding energies and chemical shifts of core levels in bismuth telluride caused by introduction of impurity tin atoms. A substantial increase in the density of electronic states below the valence-band top at energies mu approximate to 15-30 meV has been revealed. This feature in the energy spectrum account s for the unusual behavior of the kinetic coefficients in p-Bi2Te3:Sn cryst als. (C) 1999 American Institute of Physics. [S1063-7834(99)01211-3].