Transition states between pyramids and domes during Ge/Si island growth

Citation
Fm. Ross et al., Transition states between pyramids and domes during Ge/Si island growth, SCIENCE, 286(5446), 1999, pp. 1931-1934
Citations number
14
Categorie Soggetti
Multidisciplinary,Multidisciplinary,Multidisciplinary
Journal title
SCIENCE
ISSN journal
00368075 → ACNP
Volume
286
Issue
5446
Year of publication
1999
Pages
1931 - 1934
Database
ISI
SICI code
0036-8075(199912)286:5446<1931:TSBPAD>2.0.ZU;2-X
Abstract
Real-time observations were made of the shape change from pyramids to domes during the growth of germanium-silicon islands on silicon (001). Small isl ands are pyramidal in shape, whereas Larger islands are dome-shaped. During growth, the transition from pyramids to domes occurs through a series of a symmetric transition states with increasing numbers of highly inclined face ts. Postgrowth annealing of pyramids results in a similar shape change proc ess. The transition shapes are temperature dependent and transform reversib ly to the final dome shape during cooling. These results are consistent wit h an anomalous coarsening model for island growth.