This paper presents a new pixel architecture for an infrared sensor array b
ased on a pyroelectric polymer integrated with a CMOS charge amplifier. The
fill factor of the sensor is optimised by placing the amplifier structure
directly below the sensing area. The maximum responsivity is 1000 V/W @ 1 H
z and the specific detectivity is 6.84 X 10(6) cm root Hz/W @ 100 Hz. These
results are presented in comparison with those of a single MOSFET with an
external 10(9) Omega bias resistor. (C) 1999 Elsevier Science S.A. All righ
ts reserved.