The empirical verification of the FEM model of semiconductor pressure sensor

The paper deals with empirical examination and computer modelling of a piez oresistive semiconductor pressure sensor for a range of 100 kPa. Based on t he FEM model of the sensor, the membrane deflection and the state of stress were calculated. The output voltage signal of a piezoresistive bridge was computed on the basis of stress distribution. The verification of the model was carried out by comparison of computed results with direct measurements of membrane deflection as well as with sensor output signal. The optical i nterferometry was applied to measure the distribution of the deflection of sensor membrane. A description of the measurement set-up and measurement ac curacy discussion is presented as well. (C) 1999 Elsevier Science S.A. All rights reserved.