D. Goustouridis et al., Parameters influencing the flatness and stability of capacitive pressure sensors fabricated with wafer bonding, SENS ACTU-A, 76(1-3), 1999, pp. 403-408
In this work we present detailed optical and electrical characterization re
sults on silicon capacitive pressure sensing elements. The device fabricati
on technology is based on the wafer bonding technique. Using the micro-Rama
n technique, we investigate the influence of specific process steps as well
as of the wafer bonding conditions-performed either in air or in nitrogen
ambient-on the flatness and stress distribution of the pressure sensing dia
phragms. Emphasis is also given on drift as well as on fatigue measurements
since these effects determine the reliability of the devices. (C) 1999 Els
evier Science S.A. All rights reserved.