Solar cells based on the heterojunction a-C/p-Si

The heterostructure n-CdO/a-C/p-Si is proposed for use as a solar cell devi ce. The heterostructure consists of two semiconductor layers having differe nt optical band gaps. An ultrathin layer of a-C with a narrow optical band gap is located between these layers. The photovoltaic effect in this device has been investigated. It is shown that the short-circuit current I-sc = 4 6 mA/cm(2) for heterostructure n-CdO/a-C/p-Si corresponds to the values obt ained in the best solar cells based on crystalline silicon. It is also show n that the heterostructure n-CdO/p-Si (without a-C) has a short circuit cur rent which is much weaker. (C) 2000 Elsevier Science B.V. All rights reserv ed.