Energy level broadening control in quantum dots by interfacial doping

Authors
Shi, JM Freire, VN Farias, GA
Citation
Jm. Shi et al., Energy level broadening control in quantum dots by interfacial doping, SOL ST COMM, 113(2), 1999, pp. 115-119
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
113
Issue
2
Year of publication
1999
Pages
115 - 119
Database
ISI
SICI code
0038-1098(1999)113:2<115:ELBCIQ>2.0.ZU;2-Q
Abstract
A method is proposed to diminish the energy level broadening in quantum dot s due to size fluctuations. It is shown that doping the Faded interface reg ion of quantum dots can considerably reduce the broadening of their energy levels. In the case of spherical GaAs/Al0.3Ga0.7As dots of radii similar to 50 Angstrom and interface width 20 Angstrom, the presence of a Si donor in the middle of the interfaces can decrease their energy level broadening by as much as 20 meV. (C) 1999 Elsevier Science Ltd. All rights reserved.