A semi-empirical simulation model for polycrystalline thin film transistors

Authors
Wright, SW Lee, MJ Roberts, PK Judge, CP
Citation
Sw. Wright et al., A semi-empirical simulation model for polycrystalline thin film transistors, SOL ST ELEC, 43(11), 1999, pp. 2047-2055
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
11
Year of publication
1999
Pages
2047 - 2055
Database
ISI
SICI code
0038-1101(199911)43:11<2047:ASSMFP>2.0.ZU;2-B
Abstract
A continuous, single-region, differentiable, semi-empirical electrical devi ce model of a thin film transistor (TFT) is described and its application t o poly-CdSe and poly-Si TFTs involving two different technologies is presen ted. The model only requires 9 parameters to be determined, and shows excel lent agreement with experimental data in all regions of operation. The use of the model to enable accurate simulation of the operation of analogue cir cuits constructed using TFTs is also demonstrated. (C) 1999 Elsevier Scienc e Ltd. All rights reserved.