A review of narrow-channel effects for STI MOSFET's: A difference between surface- and buried-channel cases

Authors
Shigyo, N Hiraoka, T
Citation
N. Shigyo et T. Hiraoka, A review of narrow-channel effects for STI MOSFET's: A difference between surface- and buried-channel cases, SOL ST ELEC, 43(11), 1999, pp. 2061-2066
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
11
Year of publication
1999
Pages
2061 - 2066
Database
ISI
SICI code
0038-1101(199911)43:11<2061:ARONEF>2.0.ZU;2-9
Abstract
The shallow trench isolation (STI) is one of the key technologies for VLSI. The threshold voltage V-th for surface-channel STI MOSFET's becomes lower with decreasing channel width W which is called the inverse narrow-channel effect (INCE). Also, there is a hump in the subthreshold characteristic. On the contrary, buried-channel STI MOSFET's reveal a conventional narrow-cha nnel effect. Also, there is no hump in the subthreshold characteristic. This paper reviews above phenomena with a consistent explanation for the su rface- and buried-channel STI MOSFET's. Countermeasures for INCE are also d iscussed. (C) 1999 Elsevier Science Ltd. All rights reserved.