Single layer thin films of preferably, covalent hard coatings SIG, Si3N4 ha
ve been deposited by non-reactive r.f. and reactive d.c. magnetron sputteri
ng. By sequential deposition they are combined with metallic hard coatings
(TIC, TiN) to multilayer systems with an individual layer thickness of 1-50
0 nm of alternating covalent and metallic hard material layers on cemented
carbide or quart substrates. The reactive deposition was carried out at 400
degrees C in an atmosphere of N-2 or CH4 containing Ar by elementary targe
ts (Si, Ti). The non-reactive deposited films were grown by the use of stoi
chiometric targets (SIC, Si3N4, TiN, TIG) between room temperature and 550
degrees C.
The constitution of the single layer and multilayer thin films was studied
by XRD, EMPA and HRTEM in dependence on the deposition parameters (substrat
e temperature, reactive gas flow) and related to the mechanical properties
(hardness, adhesion). SiC films deposited by non-reactive sputtering in a s
tochiometric composition at temperatures between 200 and 550 degrees C show
an amorphous structure in XRD-studies. The microhardness was measured to 2
600HV0.05 and the critical loads of failure in the scratch test below 30 N
for hardmetal/SiC composites. The composition of SiCx thin films deposited
by reactive magnetron sputtering has been varied up to x less than or equal
to 1.5. The deposition rate of 0.17 nm/s is weakly dependent on the CH4 ga
s flow. The films show a hardness up to 3500HV0.05 and critical loads of fa
ilure in the scratch test of 70 N. Using XRD studies in Bragg-Brentano geom
etry, the (102) line of hexagonal SiC has been found at a substrate tempera
ture of 400 degrees C. (C) 1999 Elsevier Science S.A. All rights reserved.