Plasma etching and ion implantation on silicon, characterized by laser-modulated optical reflectance

Plasma etching and ion implantation lead to changes of the electronic and t hermal properties of semiconductor materials, which have been measured with the help of the modulated optical reflectance. Imaging based on modulated optical reflectance applied to control etching and ion implantation in the production of semiconductor devices is more efficient at higher modulation frequencies where both thermal waves and charge carrier waves contribute to the measured signal. (C) 1999 Elsevier Science S.A. All rights reserved.