Influence of the target temperature on a reactive sputtering process

Reactive magnetron sputtering often presents an unstable sputtering mode pr eventing high rate deposition of stoichiometric ceramic films, the origin o f which is mainly due to the avalanche-like target poisoning over a critica l reactive gas partial pressure. In this paper, the effect of the target te mperature is investigated for titanium targets sputtered in Ar-N-2 or Ar-O- 2 reactive discharges. Paradoxically, raising the target temperature yields a stabilisation of the transition sputtering mode close to the elemental s puttering mode. With a discharge current modulated at low frequency, the st abilisation is complete for titanium sputtered in Ar-N-2 discharges. (C) 19 99 Elsevier Science S.A. All rights reserved.