An experimental study was performed using nine different organosilicon mono
mers for the deposition of silicon oxide films by remote plasma-enhanced CV
D. The measured deposition rates are interpreted with a previously develope
d semi-empirical model. The model enables the estimation of the critical ho
w rates of oxygen atoms necessary to achieve a complete monomer conversion.
The critical flow rates can be correlated to the monomer structure. Starti
ng from tetramethoxysilane and tetraethoxysilane, the critical flow rates o
f oxygen atoms increase when alkoxy groups are replaced by alkyl groups. A
comparison between the methoxy/methyl and the ethoxy/ethyl series shows tha
t monomers containing ethoxy groups are easier to deposit than those contai
ning methoxy groups. These observations are discussed with respect to the p
ossible reaction mechanism. (C) 1999 Elsevier Science S.A. All rights reser
ved.