Overall kinetics of SiOx remote-PECVD using different organosilicon monomers

Citation
C. Bayer et al., Overall kinetics of SiOx remote-PECVD using different organosilicon monomers, SURF COAT, 119, 1999, pp. 874-878
Citations number
15
Categorie Soggetti
Material Science & Engineering
Journal title
SURFACE & COATINGS TECHNOLOGY
ISSN journal
02578972 → ACNP
Volume
119
Year of publication
1999
Pages
874 - 878
Database
ISI
SICI code
0257-8972(199909)119:<874:OKOSRU>2.0.ZU;2-T
Abstract
An experimental study was performed using nine different organosilicon mono mers for the deposition of silicon oxide films by remote plasma-enhanced CV D. The measured deposition rates are interpreted with a previously develope d semi-empirical model. The model enables the estimation of the critical ho w rates of oxygen atoms necessary to achieve a complete monomer conversion. The critical flow rates can be correlated to the monomer structure. Starti ng from tetramethoxysilane and tetraethoxysilane, the critical flow rates o f oxygen atoms increase when alkoxy groups are replaced by alkyl groups. A comparison between the methoxy/methyl and the ethoxy/ethyl series shows tha t monomers containing ethoxy groups are easier to deposit than those contai ning methoxy groups. These observations are discussed with respect to the p ossible reaction mechanism. (C) 1999 Elsevier Science S.A. All rights reser ved.