PECVD of transition metals for the production of high-density circuits

Citation
R. Heinz et al., PECVD of transition metals for the production of high-density circuits, SURF COAT, 119, 1999, pp. 886-890
Citations number
7
Categorie Soggetti
Material Science & Engineering
Journal title
SURFACE & COATINGS TECHNOLOGY
ISSN journal
02578972 → ACNP
Volume
119
Year of publication
1999
Pages
886 - 890
Database
ISI
SICI code
0257-8972(199909)119:<886:POTMFT>2.0.ZU;2-2
Abstract
For the direct metallization of polymers, a plasma process is developed tha t can be used for the fabrication of high-density interconnects (HDI) such as chipsize packages, multichip modules and fine line printed circuit board s. The two-step process consists of a polymer conditioning by plasma and a subsequent plasma-enhanced chemical vapor deposition (PECVD) of transition metals. The PECVD process combines the technological advantages as a high p olymer-metal adhesion (12-25 N/cm), very smooth polymer-metal interfaces (R t < 500 nm), and a high throwing power with economical advantages such as l ow-cost chemicals and short process times. (C) 1999 Elsevier Science S.A. A ll rights reserved.