Self-polarization control of radio-frequency-sputtered lead zirconate titanate films

The phenomenon of self-polarization in sputtered lead zirconate titanate (P ZT) thin films was analyzed. Vacancy formation enthalpies of PZT compounds were estimated for the first time considering a significant amount of coval ent binding in PZT crystals. The mobility of vacancies was estimated by a b allistic migration process with a jump time inversely proportional to the p honon frequency. A value as low as 0.12 eV results for the oxygen vacancy e nthalpy of migration, which is also responsible for fatigue in PZT capacito rs in silicon microelectronic dynamic random access memories. (C) 1999 Else vier Science S.A. All rights reserved.