Contribution from moldcular field to the temperature dependence of tunneling magnetoresistance

Citation
Jz. Wang et al., Contribution from moldcular field to the temperature dependence of tunneling magnetoresistance, ACT PHY C E, 8(12), 1999, pp. 919-926
Citations number
31
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA-OVERSEAS EDITION
ISSN journal
1004423X → ACNP
Volume
8
Issue
12
Year of publication
1999
Pages
919 - 926
Database
ISI
SICI code
1004-423X(199912)8:12<919:CFMFTT>2.0.ZU;2-3
Abstract
Based on the nearly free-electron approximation, we have investigaed the te mperature (T) dependence of spin-polarized tunneling in the magnetic tunnel junction with an asymmetrical barrier, with emphasis on the variation of m olecular field with T in the same way as that of surface magnetization. It is found that the Slonczewski model can describe well the T dependence of s pin-polarized tunneling, while the Julliere model only describes the T depe ndence of JMR qualitatively, but does accurately that of the difference of tunneling conductance between the parallel and antiparallel alignments for the magnetizations of FMs; Differing from the previous finding, we find the electron spin polarization is not strictly proportional to the surface mag netization, for the former decreases with the increasing T more rapidly tha n the latter does.