Growth model of textured diamond (111) film in CH4/O-2/H-2 atmosphere

Partially oriented and highly textured diamond films on Si(111) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nuclea tion density greater than 5 x 10(8) cm(-2) was realized in 3 min by near-su rface glow discharge. The as-grown films were characterized. by scanning el ectron microscopy (SEM), X-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH4/H-2 , the appearance of facet(111) was well controlled, and the secondary nucle ation on the facet(111) was suppressed greatly. Growth feature of homoepita xy on diamond(111) surface was demonstrated to be in Stranski-Krastanov mod el by SEM.