SPUTTERED SILICATE-LIMIT NASICON THIN-FILMS FOR ELECTROCHEMICAL SENSORS

Authors
IVANOV D CURRIE J BOUCHARD H LECOURS A ANDRIAN J YELON A POULIN S
Citation
D. Ivanov et al., SPUTTERED SILICATE-LIMIT NASICON THIN-FILMS FOR ELECTROCHEMICAL SENSORS, Solid state ionics, 67(3-4), 1994, pp. 295-299
Citations number
9
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
Solid state ionics → ACNP
ISSN journal
01672738
Volume
67
Issue
3-4
Year of publication
1994
Pages
295 - 299
Database
ISI
SICI code
0167-2738(1994)67:3-4<295:SSNTFE>2.0.ZU;2-L
Abstract
We have demonstrated for the first time the production of silicate-lim it NASICON [Na4Zr2(SiO4)3] in the form of thin films. The ionic conduc tivity was investigated as a function of the temperature. The best mea sured conductivity at 300-degrees-C is 0.5 X 10(-4) (S/cm)-1. We repor t here on the evaluation of the mechanical properties sputtered NASICO N thin films