Electronic transport through metal-1,4-phenylene diisocyanide-metal junctions

Authors
Chen, J Calvet, LC Reed, MA Carr, DW Grubisha, DS Bennett, DW
Citation
J. Chen et al., Electronic transport through metal-1,4-phenylene diisocyanide-metal junctions, CHEM P LETT, 313(5-6), 1999, pp. 741-748
Citations number
20
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CHEMICAL PHYSICS LETTERS
ISSN journal
00092614 → ACNP
Volume
313
Issue
5-6
Year of publication
1999
Pages
741 - 748
Database
ISI
SICI code
0009-2614(19991119)313:5-6<741:ETTMDJ>2.0.ZU;2-S
Abstract
We report measurements on through-bond electronic transport properties of 1 ,4-phenylene diisocyanide-metal junctions. Nanoscale metal-molecule-metal j unctions with self-assembled 1,4-phenylene diisocyanide layers were analyze d with variable temperature conductance measurements to reveal the dominant electronic transport mechanisms. Non-Ohmic thermionic emission is the domi nant process, with isocyanide-Pd showing the lowest thermionic barrier of 0 .22 eV. (C) 1999 Elsevier Science B.V. All rights reserved.