Effects of chamber pressure on current-voltage characteristic of metal-insulator-metal element in heat-treating anodized Ta2O5 film

Citation
Hw. Liu et al., Effects of chamber pressure on current-voltage characteristic of metal-insulator-metal element in heat-treating anodized Ta2O5 film, CHIN PHYS L, 16(11), 1999, pp. 838-840
Citations number
9
Categorie Soggetti
Physics
Journal title
CHINESE PHYSICS LETTERS
ISSN journal
0256307X → ACNP
Volume
16
Issue
11
Year of publication
1999
Pages
838 - 840
Database
ISI
SICI code
0256-307X(1999)16:11<838:EOCPOC>2.0.ZU;2-B
Abstract
Ta/anodized Ta2O5/Al is used as metal-insulator-metal (MIM) clement in expe riments. The current-voltage (I-V) characteristic of the MIM element depend s on the chamber pressure in I,cat-treating anodized Tn(2)O(5) him. Good no nlinear I-V characteristic has been obtained in the pressure range from 10( -2) to 10(-4) Torr. Meanwhile, the conductivity coefficient alpha of the Po ole-Frenkel (PF) equation which describes the I-V characteristic can be reg ulated by about two orders of magnitude in this pressure range, while the n on-linearity coefficient beta of the PF equation is not affected by the cha mber pressure.