AlN : TbF3 electroluminescence thin film prepared by radio-frequency magnetron sputtering

High quality AIN thin films doped with TbF3 were prepared by rf magnetron r eaction sputtering. High purity Al metal and TbF3 were used as target mater ials with N-2 and Ar as sputtering gases. The influence of preparation cond itions on the photoluminescence brightness was studied, and the electrolumi nescence was found to have a similar dependence on the concentration of TbF 3 and substrate temperature. The characteristic emission of Tb3+ ions was o btained in an AlN:TbF3 alternating current thin film electroluminescence de vice prepared with 600 degrees C substrate temperature and 4.0 mol% concent ration of TbF3.