ESD production for deep submicron triple well CMOS technologies

Authors
Nikolaidis, T Papadas, C
Citation
T. Nikolaidis et C. Papadas, ESD production for deep submicron triple well CMOS technologies, ELECTR LETT, 35(23), 1999, pp. 2025-2027
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
23
Year of publication
1999
Pages
2025 - 2027
Database
ISI
SICI code
0013-5194(19991111)35:23<2025:EPFDST>2.0.ZU;2-4
Abstract
The turn-on mechanism of an ESD protection NMOS transistor constructed with deep submicron triple well CMOS technology is studied. Owing to P-well cou pling, this transistor exhibits a reduced trigger voltage level. An efficie nt ESD protection circuit for overall ESD reliability of an integrated circ uit is also proposed.