CONTROLLED SOLDER INTERDIFFUSION FOR HIGH-POWER SEMICONDUCTOR-LASER DIODE DIE BONDING

Citation
Sa. Merritt et al., CONTROLLED SOLDER INTERDIFFUSION FOR HIGH-POWER SEMICONDUCTOR-LASER DIODE DIE BONDING, IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging, 20(2), 1997, pp. 141-145
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Manufacturing","Material Science
ISSN journal
10709894
Volume
20
Issue
2
Year of publication
1997
Pages
141 - 145
Database
ISI
SICI code
1070-9894(1997)20:2<141:CSIFHS>2.0.ZU;2-L
Abstract
High power semiconductor laser diodes and optical power amplifiers hav e important roles in solid state laser and optical fiber pumping, opti cal storage and recording, and can serve as efficient sources for medi cal and display applications, These high power devices must be mounted in the epitaxy-side down configuration for good heat transfer and so require a well-controlled, high yield, void-free, die attach method, W e have developed a method which consistently yields absolute thermal r esistances of 1.5 degrees C/W (+/-4%) on tapered angle facet semicondu ctor optical amplifiers and specific thermal resistances of 0.004 degr ees K.cm(2)/W for lasers and optical amplifiers mounted on oxygen free high conductivity (OFHC) copper heatsinks, Our method has wide proces s margins, exhibits excellent yield (>95%, N = 30) and repeatability, relaxes the requirements for highly polished heatsinks, and is well su ited for laser die attach to heatspreading diamond submounts or advanc ed composite materials.