Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFET's

Citation
Wk. Henson et al., Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFET's, IEEE ELEC D, 20(12), 1999, pp. 605-607
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
12
Year of publication
1999
Pages
605 - 607
Database
ISI
SICI code
0741-3106(199912)20:12<605:OOOBAI>2.0.ZU;2-T
Abstract
Ultra-thin gate oxide breakdown in nMOSFET's has been studied for an oxide thickness of 1.5 nm using constant voltage stressing. The pre- and post-oxi de breakdown characteristics of the device have been compared, and the resu lts have shown a strong dependence on the breakdown locations, The oxide br eakdown near the source/drain-to-gate overlap regions was found to be more severe on the post-breakdown characteristics of the device than breakdown i n the channel. This observation may be related to the dependence of breakdo wn on the distribution of electric field and areas of different regions wit hin the nMOSFET under stress.