High channel mobility in inversion layers of 4H-SiC MOSFET's by utilizing (11(2)over-bar0) face

Authors
Yano, H Hirao, T Kimoto, T Matsunami, H Asano, K Sugawara, Y
Citation
H. Yano et al., High channel mobility in inversion layers of 4H-SiC MOSFET's by utilizing (11(2)over-bar0) face, IEEE ELEC D, 20(12), 1999, pp. 611-613
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
12
Year of publication
1999
Pages
611 - 613
Database
ISI
SICI code
0741-3106(199912)20:12<611:HCMIIL>2.0.ZU;2-0
Abstract
A dramatic improvement of inversion channel mobility in 4H-SiC MOSFET's was successfully achieved by utilizing the (11 $(2) over bar $ 0) face: 17 tim es higher (95.9 cm(2)/Vs) than that on the conventional (0001) Si-face (5.5 9 cm2/Vs). A law threshold voltage of MOSPET's on the (11 $(2) over bar $ 0 ) face indicates that the (11 $(2) over bar $ 0) MOS interface has fewer ne gative charges than the (0001) MOS interface. Small anisotropy of channel m obility in 4H-SiC MOSFET's (mu([1 $(1) over bar $ 00])/mu([0001]) = 0.85) r eflects the small anisotropy in bulk electron mobility.