A novel emitter-sharpened double-gate race-track-shaped field emitter structure

In this paper, a new emitter-sharpened double-gate race-track-shaped field emitter structure is reported. The racetrack-shaped edge emission with doub le-gate control is used to provide high uniformity FEA's over large area wi thout the need of expensive submicron technology. In order to minimize the gate current, which is detrimental to the field emitter performance, an emi tter-sharpened structure is used. Experimental results show that the turn-o n voltage of the emitter-sharpened double gate structure is 45 V, which is 60% smaller than that of the single-gate structure (110 V), Furthermore, ga te current of the emitter-sharpened double-gate structure is 7 times and 15 times smaller than that of the nonemitter-sharpened double-gate structure and the single-gate structure, respectively.