A novel planarized, silicon trench sidewall oxide-merged p-i-n Schottky (TSOX-MPS) rectifier

A new high-voltage rectifier structure, a planarized silicon Trench Sidewal l OXide Merged P-i-n Schottky (TSOX-MPS) rectifier is described. This TSOX- MPS rectifier exhibits a far superior switching performance, compared to th e p-in rectifier, for the same reverse leakage current and on-state voltage . In addition, for the same lifetime; the reverse leakage current of the TS OX-MPS rectifier is equal to that of the p-i-n rectifier, not so much sensi tive than the MPS rectifier does. These aspects of the TSOX-MPS rectifier h ave been experimentally verified, by fabrication of 400 V TSOX-MPS rectifie rs.