Ge-on-Si approaches to the detection of near-infrared light

We review our recent results on Ge-based near-infrared photodetectors grown on silicon. We fabricated metal-semiconductor-metal photodetectors based o n epitaxial pure-Ge grown on silicon by Chemical Vapor Deposition, Material characterization and device performances are illustrated and discussed. Ex ploiting a novel approach based on evaporation of polycrystalline-Ge on sil icon, we also realized efficient near-infrared photodiodes with good speed and sensitivity. Finally, multiple-element devices were designed, fabricate d, and tested, such as a voltage-tunable wavelength-selective photodetector based on a SiGe superlattice and a linear array of 16 photodetectors in po ly- Ge on Si.