High-performance double-recessed InAlAs/InGaAs power metamorphic HEMT on GaAs substrate

Double-recess power metamorphic high electron mobility transistors (MHEMT's ) on GaAs substrates were successfully demonstrated. The In(.53)A(.47)As/In (.65)Al(.35)AS structures exhibited extrinsic transconductance of 1050 mS/m m and breakdown of 8.3 V, which are comparable to that of the InP power HEM T, Excellent maximum power added efficiency (PAE) of 60.2% with output powe r of 0.45 W/mm and record associated power gain of 17.1 dB were realized at 20 GHz, A maximum output power of 0.51 W/mm has also been demonstrated,vit h the device, This is the first demonstration of high-efficiency K-band pow er MHEMT's.