1.2-mu m GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor deposition

We demonstrate here 1.2-mu m laser emission from a GaAsP-InGaAs strain comp ensated single-quantum-well (SQW) diode. This development enables the fabri cation of vertical-cavity surface-emitting lasers for optical interconnecti on through Si wafers. Strain compensation and low temperature growth were u sed to extend the wavelength of emission to the longest yet achieved on a G aAs substrate in this materials system. The minimum threshold density achie ved was 273.4 A/cm(2) at a cavity length of 640 mu m We have also demonstra ted an 1.144-mu m lasing wavelength in a 820-mu m-long cavity on a GaAs sub strate with a strained InGaAs-GaAs SQW laser for comparison using a low-tem perature metal-organic chemical vapor deposition growth technique, The thre shold current density for a 590-mu m-long cavity under CW operation was 149 .7 A/cm(2).