Enhanced injection in n(++)-poly/SiOx/SiO2/p-sub MOS capacitors for low-voltage nonvolatile memory applications: Experiment

In this paper, n(++)-poly/SiOx/SiO2/p-sub capacitors with enhanced electron injection under substrate accumulation are extensively studied. First, sys tematic investigation of the role of technology parameters in the PECVD dep osition of the SiOx films is presented, In particular, the effect of the si lane dilution parameter on the device performance is investigated and the S iOx film optimized in terms of reliability and electron injection enhanceme nt. Then, investigation of the electrical behavior of n(++)-poly/SiOx/SiO2/ p-sub MOS capacitors is presented. As a result, a picture of the space defe ct distribution in the SiOx films is proposed, In SiOx films, a relevant de nsity of trapped charge adds to ionized impurities. In particular, the net charge is negative in the bulk of the dielectric, indicating that trapped e lectrons exceed all the other charge contributions. The space distribution of defects is strongly nonuniform and has the maximum in the vicinity of th e SiOx/SiO2 interface, After de current stress, the devices undergo electri cal degradation, the dominant mechanism of degradation being the creation o f interface hole traps. The trap generation model is based on the release o f hydrogen and pairs generation in the SiOx films, The time-scale of trap f illing during the stress is tens of seconds, which suggests that the stress -induced traps are deep in the energy gap.