A solar blind, hybrid III-nitride/silicon, ultraviolet avalanche photodiode

Authors
Ruden, PP Krishnankutty, S
Citation
Pp. Ruden et S. Krishnankutty, A solar blind, hybrid III-nitride/silicon, ultraviolet avalanche photodiode, IEEE DEVICE, 46(12), 1999, pp. 2348-2350
Citations number
21
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
12
Year of publication
1999
Pages
2348 - 2350
Database
ISI
SICI code
0018-9383(199912)46:12<2348:ASBHIU>2.0.ZU;2-#
Abstract
A novel, hybrid III-Nitride/Si, ultraviolet (UV) avalanche photodiode (APD) is proposed, The device combines the favorable short wavelength interband absorption properties of the direct bandgap III-Nitride material with the u nique impact ionization characteristics of silicon, Solar blind response is achieved through optical isolation of the multiplication region of the dev ice.