Analysis of GaAsOPFET with improved optical absorption under back illumination

Authors
Roy, NS Pal, BB Khan, RU
Citation
Ns. Roy et al., Analysis of GaAsOPFET with improved optical absorption under back illumination, IEEE DEVICE, 46(12), 1999, pp. 2350-2353
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
46
Issue
12
Year of publication
1999
Pages
2350 - 2353
Database
ISI
SICI code
0018-9383(199912)46:12<2350:AOGWIO>2.0.ZU;2-L
Abstract
The effect of back illumination with improved optical absorption has been a nalyzed for an ion-implanted GaAs OPFET considering Pearson IV distribution of impurities. Plots have been made for two photo voltages developed acros s the substrate active layer junction and the Schottky junction. The drain- source current is significantly enhanced for the device when the fiber is i nserted up to the active layer substrate junction than the case where finit e substrate effect is taken into account.