An investigation of the effects of iron in p(+)n silicon diodes for simulated plasma source ion implantation studies

This work examines the effect of iron as a contaminate implant impurity on the characteristics of boron p(+)n silicon diodes, Plasma-based doping proc esses [e.g., plasma source ion implantation (PSII)] are subject to concerns about the introduction of contaminant impurities. Here, a relevant databas e on iron contaminant effects was acquired through a controlled study using conventional ion-beam implantation. Uncontaminated control diodes had leak age current densities of 69 nA-cm(-2) at -5 volts and ideality factors <1.0 5, Iron contaminated diodes had increasing leakage current densities of 8-6 0 nA-cm(-2) with increasing iron implant doses of 4 x 10(7) to 4 x 10(14) c m(-2) and ideality factors <1.07 over six decades of current, regardless of dose.