Modeling manufacturing yield and reliability

Authors
Citation
T. Kim et W. Kuo, Modeling manufacturing yield and reliability, IEEE SEMIC, 12(4), 1999, pp. 485-492
Citations number
26
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
ISSN journal
08946507 → ACNP
Volume
12
Issue
4
Year of publication
1999
Pages
485 - 492
Database
ISI
SICI code
0894-6507(199911)12:4<485:MMYAR>2.0.ZU;2-0
Abstract
In this paper, we introduce the concept of reliability defect, present the time-dependent defect growth model during operations based on a defect-rela ted gate oxide breakdown mechanism, and build the yield-reliability relatio n model. Discussions presented,here:can also be applicable to other device failures when different physics-of-failure mechanisms are found. Through th e relation model, it is possible to find a minimum level of latent defect s creening to assure the required level of reliability and predict reliabilit y for new products when it is combined with a yield prediction model.