In this paper, we introduce the concept of reliability defect, present the
time-dependent defect growth model during operations based on a defect-rela
ted gate oxide breakdown mechanism, and build the yield-reliability relatio
n model. Discussions presented,here:can also be applicable to other device
failures when different physics-of-failure mechanisms are found. Through th
e relation model, it is possible to find a minimum level of latent defect s
creening to assure the required level of reliability and predict reliabilit
y for new products when it is combined with a yield prediction model.