Recombination activity in directly bonded high resistivity silicon wafers measured by the photoconductance decay method

Characterisation of bonded high-resistivity silicon wafers by the microwave photoconductance decay (mu PCD) technique has been performed. Bonding is s hown to drastically alter the bulk recombination activity of the wafers. Th e technique allows to separate between bulk and interface recombination and appears as a powerful tool to evaluate the quality of the bonded interface .