Effects of crystal originated particles on breakdown characteristics of ultra thin gate oxide

The effects of crystal originated particles (COPs) on the ultra thin gate o xide for recent ultra large-scale integration (ULSI) devices have been stud ied. Various types of Czochralski (CZ) silicon wafers were prepared by cont rol the pulling speed of silicon ingot re, clarify the relationships betwee n COPs and breakdown characteristics of the ultra thin gate oxide. The dist ribution of COPs, measured by optical shallow defect analyzer and particle counter: was compared with the results of time zero dielectric breakdown (T ZDB), time dependent dielectric breakdown (TDDB) and sl ess induced leakage current (SILC) for gate oxides with the thickness of 4.5-10 nm. As a resul t, it was found that the effect of COPs is not a major factor for the degra dation of ultra thin gate oxide in recent ULSI devices.