Static and dynamic characteristics of a 54 GHz f(max) implanted base 0.35 mu m single-polysilicon bipolar technology

High performance single-polysilicon npn bipolar transistors using a low cos t 200 mm 0.35 mu m bipolar technology have been fabricated, and the electri cal properties related to physical and technological parameters. The device s feature record cut-off frequency and maximum oscillation frequency of 35 GHz and 54 GHz respectively, comparable to state-of-the-art results from mo re complex double-polysilicon bipolar processes.