Jj. Lee et al., Epitaxial growth of GaN on LaAlO3(100) substrate by RF plasma assisted molecular beam epitaxy, JPN J A P 1, 38(11), 1999, pp. 6487-6488
About 0.4-mu m-thick GaN films were epitaxially grown on a LaAlO3(100) subs
trate by rf plasma assisted molecular beam epitaxy. The growth mode was mon
itored by reflection high-energy electron diffraction and the crystalline q
uality of the GaN films was characterized by X-ray diffraction and transmis
sion electron microscopy. The matching face relationship between GaN and th
e LaAlO3(100) substrate was [0001]GaN parallel to [100]LaAlO3 and [01 (1) o
ver bar 0]GaN // [0 (1) over bar 1]LaAlO3, and a lattice mismatch of simila
r to 3% for the [0 (1) over bar 1] plane was estimated.