Intermixing characteristics of strained-InGaAs/InGaAsP multiple quantum well structure using impurity-free vacancy diffusion

The quantum well intermixing of a strained InGaAs/InGaAsP multiple quantum well using an impurity-free vacancy diffusion technique has been studied. T he bandgap wavelength of quantum well was changed by the intermixing from 1 .55 mu m band to 1.3 mu m band with a wavelength shift of 237 nm. The trans formation from a multiple quantum well structure to a homogeneous alloy was observed. The strain-enhanced intermixing rate and self-interdiffusion rat e were observed.