T. Maruyama et al., Red emission from Eu-doped GaN studied by photoluminescence and photo-calorimetric spectroscopy, JPN J A P 2, 38(11B), 1999, pp. L1306-L1308
Bright and sharp photoluminescence was obtained from Eu-doped GaN films gro
wn by gas-source molecular beam epitaxy using ammonia. It was found that th
e decrease in luminescence intensity is small between 80 K and 300 K, compa
red with the red emission from InGaN. The red emission from Eu-doped GaN al
so showed only a small peak shift within 1.6 meV in the same temperature ra
nge. From these results, the advantage of using Eu-doped GaN as a stable op
toelectronic material against temperature variation is shown.