Red emission from Eu-doped GaN studied by photoluminescence and photo-calorimetric spectroscopy

Bright and sharp photoluminescence was obtained from Eu-doped GaN films gro wn by gas-source molecular beam epitaxy using ammonia. It was found that th e decrease in luminescence intensity is small between 80 K and 300 K, compa red with the red emission from InGaN. The red emission from Eu-doped GaN al so showed only a small peak shift within 1.6 meV in the same temperature ra nge. From these results, the advantage of using Eu-doped GaN as a stable op toelectronic material against temperature variation is shown.