Optical characterization of carbon-doped Ga0.47In0.53As

Authors
Gerling, M Hamm, RA
Citation
M. Gerling et Ra. Hamm, Optical characterization of carbon-doped Ga0.47In0.53As, J LUMINESC, 85(1-3), 1999, pp. 103-106
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LUMINESCENCE
ISSN journal
00222313 → ACNP
Volume
85
Issue
1-3
Year of publication
1999
Pages
103 - 106
Database
ISI
SICI code
0022-2313(199912)85:1-3<103:OCOCG>2.0.ZU;2-D
Abstract
The optical properties of intentionally carbon-doped Ga1-xInxAs lattice mat ched to InP grown by metal-organic molecular beam epitaxy were studied. Sta ndard photoluminescence and photoluminescence excitation measurements were carried out on samples with different doping concentrations and a carbon-re lated acceptor level was found 42 meV above the valence band edge. (C) 1999 Elsevier Science B.V. All rights reserved.