B. Slater et al., Study of surface segregation of antimony on SnO2 surfaces by computer simulation techniques, J PHYS CH B, 103(48), 1999, pp. 10644-10650
We have carried out a computational bulk and surface study of the behavior
of Sb(III) and Sb(V) ions on the (110) and (001) surfaces of SnO2. In addit
ion, we have also examined the behavior of the Sn(II) and oxygen vacancy co
mplex in the bulk and surface. These calculations suggest that Sb(III) is a
ssociated with in-plane surface oxygen species, while Sb(V) is subsumed bel
ow bridging oxygen ions in a more bulk-like environment. In addition, we fi
nd two possible Sn(II)/O-vacancy complex sites for the (110) surface: one i
s associated with a bridging oxygen vacancy, and the most favorable arrange
ment is associated with an in-plane subsurface oxygen vacancy. These calcul
ations indicate not only the most favorable complex sites but also predict
the surface segregation and defect energies. The theoretically derived site
s are in complete agreement with the experimental data reported recently an
d proposed models for sensor activity.(1,2).