Kinetics of Li insertion into polycrystalline and nanocrystalline 'SnSb' alloys investigated by transient and steady state techniques

Citation
Jo. Besenhard et al., Kinetics of Li insertion into polycrystalline and nanocrystalline 'SnSb' alloys investigated by transient and steady state techniques, J POWER SOU, 82, 1999, pp. 268-272
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics","Environmental Engineering & Energy
Journal title
JOURNAL OF POWER SOURCES
ISSN journal
03787753 → ACNP
Volume
82
Year of publication
1999
Pages
268 - 272
Database
ISI
SICI code
0378-7753(199909)82:<268:KOLIIP>2.0.ZU;2-2
Abstract
Two different methods for studying the kinetics of electrochemical insertio n of lithium into thick-film polycrystalline SnSb and thin-film nanocrystal line 'SnSb' alloys (nanocrystalline SnSb alloys with an excess of Sn as sec ond phase) are presented. In each case, the composition dependence of the c hemical diffusion coefficient has been obtained from galvanostatic polariza tion experiments on the asymmetric cell, Li \ 1 M LiClO4 in PC \ SnSb, with Li as additional reference electrode. Coulometric titrations were employed for composition variation with high stoichiometric resolution. Polycrystal line SnSb alloys have been prepared from the elements and incorporated as c athode into the cell. The chemical diffusion coefficient (D) over tilde as function of lithium content has been obtained from a combination of short-t ime transient and steady state measurements. Values of (D) over tilde for p olycrystalline LideltaSnSb-alloys are in the range of 10(-10) cm(2) s(-1) a t 25 degrees C. Alternatively, for the thin-film nanocrystalline 'SnSb' all oy, the short- and long-time approximation of the polarization voltage is u sed to obtain the chemical diffusion coefficients without taking into accou nt the slope of the coulometric titration curve. The low (D) over tilde-val ue resulting for the nanocrystalline "SnSb' alloy ((D) over tilde < 4 X 10( -12) cm(2) s(-1)) may be attributed to its complex morphology as well as to the existence of additional Sn domains acting as diffusion barriers. (C) 1 999 Elsevier Science S.A. Ail rights reserved.