Jo. Besenhard et al., Kinetics of Li insertion into polycrystalline and nanocrystalline 'SnSb' alloys investigated by transient and steady state techniques, J POWER SOU, 82, 1999, pp. 268-272
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics","Environmental Engineering & Energy
Two different methods for studying the kinetics of electrochemical insertio
n of lithium into thick-film polycrystalline SnSb and thin-film nanocrystal
line 'SnSb' alloys (nanocrystalline SnSb alloys with an excess of Sn as sec
ond phase) are presented. In each case, the composition dependence of the c
hemical diffusion coefficient has been obtained from galvanostatic polariza
tion experiments on the asymmetric cell, Li \ 1 M LiClO4 in PC \ SnSb, with
Li as additional reference electrode. Coulometric titrations were employed
for composition variation with high stoichiometric resolution. Polycrystal
line SnSb alloys have been prepared from the elements and incorporated as c
athode into the cell. The chemical diffusion coefficient (D) over tilde as
function of lithium content has been obtained from a combination of short-t
ime transient and steady state measurements. Values of (D) over tilde for p
olycrystalline LideltaSnSb-alloys are in the range of 10(-10) cm(2) s(-1) a
t 25 degrees C. Alternatively, for the thin-film nanocrystalline 'SnSb' all
oy, the short- and long-time approximation of the polarization voltage is u
sed to obtain the chemical diffusion coefficients without taking into accou
nt the slope of the coulometric titration curve. The low (D) over tilde-val
ue resulting for the nanocrystalline "SnSb' alloy ((D) over tilde < 4 X 10(
-12) cm(2) s(-1)) may be attributed to its complex morphology as well as to
the existence of additional Sn domains acting as diffusion barriers. (C) 1
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