Neo-pentoxide precursor synthesis, solution preparation, and electronic properties of (Ba,Sr)TiO3 thin films derived from a solution route

Citation
Tj. Boyle et al., Neo-pentoxide precursor synthesis, solution preparation, and electronic properties of (Ba,Sr)TiO3 thin films derived from a solution route, J SOL-GEL S, 16(1-2), 1999, pp. 47-55
Citations number
26
Categorie Soggetti
Material Science & Engineering
Journal title
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
ISSN journal
09280707 → ACNP
Volume
16
Issue
1-2
Year of publication
1999
Pages
47 - 55
Database
ISI
SICI code
0928-0707(199910)16:1-2<47:NPSSPA>2.0.ZU;2-6
Abstract
We have recently isolated the neo-pentoxide (HOCH2CMe3, ONp) derivatives of Ba, Sr, and Ti as Ba-4(ONp)(8)(HONp)(6)(py)(2), Sr-5(O)(ONp)(8)(Solv)(5) ( Solv = solvent), and Ti-2(ONp)(8), respectively. The combination of these p recursors were found to be readily soluble in a wide range of solvents and thus were excellent candidates for preparation of barium strontium titanate ((Ba,Sr)TiO3 or BST) thin films using spin-cast deposition techniques. The highest quality BST films for this system were generated from ternary mixt ures dissolved in either pyridine or pyridine/toluene. By in situ VT-GIXRD analysis it was determined that the perovskite phase of BST was readily for med at 650 degrees C. The electronic properties of films crystallized at 70 0 degrees C indicated that the thin films (300 nm) possessed a dielectric c onstant of 120 (tan delta = 0.03) with a tunability of 29% at +/- 10 V. 300 nm films (700 degrees C) which had been generated from a standard BST solu tion modified with a novel tridentate ligand, had a higher dielectric const ant of 180 and a tunability of 35% at +/- 10 V. The collective characterist ics of these precursors offer an attractive alternative to the more complex , less stable sol-gel precursors currently in use.