Sol-gel derived ferroelectric thin films: Avenues for control of microstructural and electric properties

The paper presents short review of the works performed during the last few years in the field of the alkoxy-derived ferroelectric films. PZT films wer e prepared using titanium and zirconium alkoxides and Pb(CH3COO)(2). 2H(2)O as precursors. Different way of lead acetate dehydration and the impact of lead excess in the precursor solutions on the properties of the PZT films are discussed. Trimetallic alkoxide systems Bi(OR)(3)-Ta(OR)(5)-ROH (R = Me , Et or Pr-i) were studied as precursors for preparation of SrBi2Ta2O9 film s. Films prepared from these solutions and annealed at the temperature betw een 700 and 750 degrees C demonstrated the remanent polarization P-r* - P-r (boolean AND) = 7-9 mu C/cm(2). Ba1-xSrxTiO3 films we applied from modified alkoxide solutions. Decomposition of the organic phase in the course of th ermal treatment of the films is studied by IR-spectroscopy. The dependence of the dielectric permittivity of the films via the annealing temperature i s reported. Preparation of LiNbO3, SrZr0.2Ti0.8O3, Zr0.8Sn0.2TiO4 is briefl y discussed.